代表性学术论文：

1.Xuemin Zhang, Changling Yan*, Jinghang Yang, Chao Pang, Yunzhen Yue, Chunhong Zeng, and Baoshun Zhang,“Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays，”Journal of Semiconductors，v.43，062804，2022.

2.Xuemin Zhang, Changling Yan∗, Xin Hu, Qingsong Dong, Zhiyi Liu, Weiming Lv, Chunhong Zeng, Ruigong Su, Yiqun Wang, Tianyu Sun, Zheng Xing, Chao Pang, Baoshun Zhang, Wenhua Shi and Minsheng Long,“High performance mid-wave infrared photodetector based on graphene/black phosphorus heterojunction，”Mater. Res. Express，v.8，035602，2021.

3.X.M. Zhang, C.L. Yan*, G.H. Yu, C.H. Zeng, T.Y. Sun, Z. Xing, Y.Q. Wang, J.H. Yang, and B.S. Zhang,“High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage，”Semiconductors，v.55，p.387-393，2021.

4.Xuemin Zhang, Changling Yan∗, Chunhong Zeng, Tianyu Sun, Zheng Xing, Wenhua Shi, Yiqun Wang, Chao Pang and Baoshun Zhang,“Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition，”Mater. Res. Express，v.7，116410，2020.

5.Qiming Chen, Changling Yan∗, and Yi Qu, “Material characteristics of self-assembled mushroom-like InGaN nanocolumns,” Superlattice and Microstructures，v.99，p.169-174，2016.

授权发明专利：

1.非对称微盘腔边发射半导体激光器阵列，国家发明专利，2020-04-24, ZL201910322031.1；

2.具有波长选择光栅的非圆盘型腔半导体激光器，国家发明专利，2018-07-13，ZL201410310184.1

3.具有高阻区的椭圆环形腔微腔激光器，国家发明专利，2018-03-20，ZL 201410745236.8

4.衬底上分布有导热通道的量子级联激光器，国家发明专利，2013-11-13，ZL 201210179220.6

5.非圆环形腔半导体激光器，国家发明专利，2011-04-20，ZL 200910217886.4